HgGa2S4 Crystal Fundamentals Explained

HgGa2S4 Crystal Fundamentals Explained

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Optical parametric oscillator pumped at ~1 µm with intracavity mid-IR distinction-frequency technology in OPGaAs

Output idler energies over the microjoule stage are acquired with most conversion performance of eleven% for your amplifier phase, which can be much more than two situations a lot better than the results acquired by having an analogous sample from the greatly unfold content AgGaS 2 .

The first-concepts density useful calculations are performed to review the geometries and electronic structures of HgGa2X4 (X = S, Se, Te) semiconductors with defect chalcopyrite structures, and the optical properties of all crystals are investigated systematically. The outcomes suggest that these compounds have related band structures and also the band hole decreases from S to Se to Te. To the linear optical Qualities, a few crystals clearly show great mild transmission during the IR and aspect noticeable locations, and specifically, HgGa2S4 and HgGa2Se4 crystals possess moderate birefringence.

The higher conversion performance and wide selection of radiation wavelength tuning lets to be expecting that this product may well compete with AgGaS2, AgGaSe2, ZnGeP2 and GaSe crystals in spite of the sizeable difficulty of massive dimension crystals advancement method.

We report new experimental success about the section-matching Homes of yellow coloration HgGa2S4 crystals for harmonic era of the Nd:YAG laser-pumped KTiOPO4 (KTP) optical parametric oscillator (OPO) and CO2 lasers from the 0.944-ten.5910 μm selection. Furthermore, we existing new Sellmeier equations that offer a very good reproduction with the present experimental benefits in addition to the released info factors for 2nd-harmonic technology of CO2 laser radiation at nine.

induced oscillations while in the idler wavelength of less than 200MHz around 300s; the small-phrase security was less than 3MHz

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